دورية أكاديمية
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
| العنوان: | Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements |
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| المؤلفون: | Bisi, D., Meneghini, M., de Santi, C., Chini, A., Dammann, M., Bruckner, P., Mikulla, M., Meneghesso, G., Zanoni, E. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(10):3166-3175 Oct, 2013 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2013.2279021 |