دورية أكاديمية

Xs-MET-a reduced complexity fabrication process using complementary heterostructure field effect transistors for analog, low power, space applications

التفاصيل البيبلوغرافية
العنوان: Xs-MET-a reduced complexity fabrication process using complementary heterostructure field effect transistors for analog, low power, space applications
المؤلفون: Cerny, C.L., Via, G.D., Ebel, J.L., DeSalvo, G.C., Quach, T.K., Bozada, C.A., Dettmer, R.W., Gillespie, J.K., Jenkins, T.J., Pettiford, C.I., Sewell, J.S., Ehret, J.E., Merkel, K., Wilson, A., Lyke, J.
المصدر: IEEE Aerospace and Electronic Systems Magazine IEEE Aerosp. Electron. Syst. Mag. Aerospace and Electronic Systems Magazine, IEEE. 13(3):7-14 Mar, 1998
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:08858985
1557959X
DOI:10.1109/62.659858