مؤتمر
Ultra-high aspect ratio trenches in single crystal silicon with epitaxial gap tuning
العنوان: | Ultra-high aspect ratio trenches in single crystal silicon with epitaxial gap tuning |
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المؤلفون: | Ng, E. J., Chiang, C.-F., Yang, Y., Hong, V. A., Ahn, C. H., Kenny, T. W. |
المصدر: | 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on. :182-185 Jun, 2013 |
Relation: | 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781467359832 |
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تدمد: | 2159547X 21641641 |
DOI: | 10.1109/Transducers.2013.6626732 |