Ultra-high aspect ratio trenches in single crystal silicon with epitaxial gap tuning

التفاصيل البيبلوغرافية
العنوان: Ultra-high aspect ratio trenches in single crystal silicon with epitaxial gap tuning
المؤلفون: Ng, E. J., Chiang, C.-F., Yang, Y., Hong, V. A., Ahn, C. H., Kenny, T. W.
المصدر: 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on. :182-185 Jun, 2013
Relation: 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467359832
تدمد:2159547X
21641641
DOI:10.1109/Transducers.2013.6626732