20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

التفاصيل البيبلوغرافية
العنوان:	20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications
المؤلفون:	Cheng, Lin, Agarwal, Anant K., Capell, Craig, O'Loughlin, Michael, Van Brunt, Edward, Lam, Khiem, Richmond, Jim, Burk, Al, Palmour, John W., O'Brien, Heather, Ogunniyi, Aderinto, Scozzie, Charles
المصدر:	2013 Abstracts IEEE International Conference on Plasma Science (ICOPS) Plasma Science (ICOPS), 2013 Abstracts IEEE International Conference on. :1-1 Jun, 2013
Relation:	2013 IEEE 40th International Conference on Plasma Sciences (ICOPS)
قاعدة البيانات:	IEEE Xplore Digital Library