مؤتمر
A physics-based statistical model for reliability of STT-MRAM considering oxide variability
| العنوان: | A physics-based statistical model for reliability of STT-MRAM considering oxide variability |
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| المؤلفون: | Ho, Chih-Hsiang, Panagopoulos, Georgios D., Kim, Soo Youn, Kim, Yusung, Lee, Dongsoo, Roy, Kaushik |
| المصدر: | 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on. :29-32 Sep, 2013 |
| Relation: | 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467357333 9781467357364 |
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| تدمد: | 19461569 19461577 |
| DOI: | 10.1109/SISPAD.2013.6650566 |