مؤتمر
Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides
| العنوان: | Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides |
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| المؤلفون: | Habersat, Daniel B., Lelis, Aivars J., Goldsman, Neil |
| المصدر: | 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on. :324-327 Sep, 2013 |
| Relation: | 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467357333 9781467357364 |
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| تدمد: | 19461569 19461577 |
| DOI: | 10.1109/SISPAD.2013.6650640 |