دورية أكاديمية

Improvement in the Photo-Bias Stability of Zinc Tin Oxide Thin-Film Transistors by Introducing a Thermal Oxidized ${\rm TiO}_{2}$ Film as a Hole Carrier Blocking Layer

التفاصيل البيبلوغرافية
العنوان: Improvement in the Photo-Bias Stability of Zinc Tin Oxide Thin-Film Transistors by Introducing a Thermal Oxidized ${\rm TiO}_{2}$ Film as a Hole Carrier Blocking Layer
المؤلفون: Lee, C.-K., Hwang, A. Y., Yang, H., Kim, D.-H., Bae, J.-U., Shin, W.-S., Jeong, J. K.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(12):4165-4172 Dec, 2013
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189383
15579646
DOI:10.1109/TED.2013.2286819