مؤتمر
Mixed signal circuits based on a 0.2 /spl mu/m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
| العنوان: | Mixed signal circuits based on a 0.2 /spl mu/m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology |
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| المؤلفون: | Thiede, A., Schlechtweg, M., Hurm, V., Wang, Z.-G., Lang, M., Leber, P., Lao, Z., Nowotny, U., Rieger-Motzer, M., Sedler, M., Kohler, K., Bronner, W., Fink, T., Hulsmann, A., Kaufel, G., Raynor, B., Schneider, J., Jakobus, T., Schroth, J., Berroth, M. |
| المصدر: | IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. High performance electron devices for microwave and optoelectronic applications High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on. :151-156 1997 |
| Relation: | IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078034135X 9780780341357 |
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| DOI: | 10.1109/EDMO.1997.668590 |