Laser backside contact annealing of SiC power devices: A prerequisite for SiC thin wafer technology

التفاصيل البيبلوغرافية
العنوان: Laser backside contact annealing of SiC power devices: A prerequisite for SiC thin wafer technology
المؤلفون: Rupp, R., Kern, R., Gerlach, R.
المصدر: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on. :51-54 May, 2013
Relation: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467351348
9781467351355
9781467351362
تدمد:10636854
19460201
DOI:10.1109/ISPSD.2013.6694396