مؤتمر
Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO2 gate insulator
| العنوان: | Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO2 gate insulator |
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| المؤلفون: | Ahn, Woojin, Seok, Ogyun, Ha, Min-Woo, Kim, Young-Shil, Han, Min-Koo |
| المصدر: | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on. :311-314 May, 2013 |
| Relation: | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467351348 9781467351355 9781467351362 |
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| تدمد: | 10636854 19460201 |
| DOI: | 10.1109/ISPSD.2013.6694411 |