Matching behavior of analog FDSOI n-MOS-transistors under large backgate voltage swing operating conditions

التفاصيل البيبلوغرافية
العنوان: Matching behavior of analog FDSOI n-MOS-transistors under large backgate voltage swing operating conditions
المؤلفون: Thewes, R., Enders, G., Hofmann, F., Hoenlein, W., Vollrath, J., Ferrant, R., Flatresse, P., Pelloux-Prayer, B., Allain, F., Reimbold, G., Mazure, C.
المصدر: 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE. :1-2 Oct, 2013
Relation: 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (Formerly known as SOI Conference)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479913619
تدمد:1078621X
DOI:10.1109/S3S.2013.6716547