مؤتمر
Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT
| العنوان: | Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT |
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| المؤلفون: | Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu |
| المصدر: | 2013 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2013 IEEE International. :6.6.1-6.6.4 Dec, 2013 |
| Relation: | 2013 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781479923069 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2013.6724576 |