مؤتمر
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
| العنوان: | Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond |
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| المؤلفون: | Bangsaruntip, S., Balakrishnan, K., Cheng, S.-L., Chang, J., Brink, M., Lauer, I., Bruce, R. L., Engelmann, S. U., Pyzyna, A., Cohen, G. M., Gignac, L. M., Breslin, C. M., Newbury, J. S., Klaus, D. P., Majumdar, A., Sleight, J. W., Guillorn, M. A. |
| المصدر: | 2013 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2013 IEEE International. :20.2.1-20.2.4 Dec, 2013 |
| Relation: | 2013 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781479923069 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2013.6724667 |