دورية أكاديمية

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-$k$ Gated MOSFETs by a Modified Charge Pumping Technique

التفاصيل البيبلوغرافية
العنوان: Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-$k$ Gated MOSFETs by a Modified Charge Pumping Technique
المؤلفون: Lu, C.-C., Chang-Liao, K.-S., Tsao, C.-H., Wang, T.-K., Ko, H.-C., Hsu, Y.-T.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 61(4):936-942 Apr, 2014
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189383
15579646
DOI:10.1109/TED.2014.2303885