7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate

التفاصيل البيبلوغرافية
العنوان: 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate
المؤلفون: Ahn, JungChak, Lee, Kyungho, Kim, Yitae, Jeong, Heegeun, Kim, Bumsuk, Kim, Hongki, Park, Jongeun, Jung, Taesub, Park, Wonje, Lee, Taeheon, Park, Eunkyung, Choi, Sangjun, Choi, Gyehun, Park, Haeyong, Choi, Yujung, Lee, Seungwook, Kim, Yunkyung, Jung, Y. Jay, Park, Donghyuk, Nah, Seungjoo, Oh, Youngsun, Kim, Mihye, Lee, Yooseung, Chung, Youngwoo, Hisanori, Ihara, Im, Joonhyuk, Lee, Daniel-K J, Yim, Byunghyun, Lee, GiDoo, Kown, Heesang, Choi, Sungho, Lee, Jeonsook, Jang, Dongyoung, Kim, Youngchan, Kim, Tae Chan, Hiroshige, Goto, Choi, Chi-Young, Lee, Duckhyung, Han, GabSoo
المصدر: 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International. :124-125 Feb, 2014
Relation: 2014 IEEE International Solid- State Circuits Conference (ISSCC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479909186
9781479909209
تدمد:01936530
23768606
DOI:10.1109/ISSCC.2014.6757365