High on-currents with highly strained Si nanowire MOSFETs

التفاصيل البيبلوغرافية
العنوان: High on-currents with highly strained Si nanowire MOSFETs
المؤلفون: Luong, G. V., Knoll, L., Suess, M. J., Sigg, H., Schafer, A., Trellenkamp, S., Bourdelle, K. K., Buca, D., Zhao, Q. T., Mantl, S.
المصدر: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on. :73-76 Apr, 2014
Relation: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479937189
DOI:10.1109/ULIS.2014.6813909