التفاصيل البيبلوغرافية
العنوان: |
High on-currents with highly strained Si nanowire MOSFETs |
المؤلفون: |
Luong, G. V., Knoll, L., Suess, M. J., Sigg, H., Schafer, A., Trellenkamp, S., Bourdelle, K. K., Buca, D., Zhao, Q. T., Mantl, S. |
المصدر: |
2014 15th International Conference on Ultimate Integration on Silicon (ULIS) Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on. :73-76 Apr, 2014 |
Relation: |
2014 15th International Conference on Ultimate Integration on Silicon (ULIS) |
قاعدة البيانات: |
IEEE Xplore Digital Library |