التفاصيل البيبلوغرافية
| العنوان: |
Reducing breakthrough dislocation toward Si/SiGe heterostructure to improve advanced HKMG SRAM device performance by optimizing fluorine co-implantation |
| المؤلفون: |
Chin, Y. L., Lin, Y. S., Hu, Y. C., Chang, M. H., Yu, T. W., Chen, W. T., Yang, C. Y., Lin, Y. J., Chien, C. C., Wu, J. Y. |
| المصدر: |
2014 International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2014 International Workshop on. :1-4 May, 2014 |
| Relation: |
2014 14th International Workshop on Junction Technology (IWJT) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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