The effect of backside roughness on Al interconnect dimensions for RF CMOS SOI devices

التفاصيل البيبلوغرافية
العنوان: The effect of backside roughness on Al interconnect dimensions for RF CMOS SOI devices
المؤلفون: Moon, Matthew D., Gambino, Jeffrey P., Adderly, Shawn A., Hanrahan, Jeffrey, Cucci, Brett
المصدر: 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014) Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. :384-388 May, 2014
Relation: 2014 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479939442
تدمد:10788743
23766697
DOI:10.1109/ASMC.2014.6846960