مؤتمر
InAs gate-all-around nanowire MOSFETs by top-down approach
| العنوان: | InAs gate-all-around nanowire MOSFETs by top-down approach |
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| المؤلفون: | Wu, H., Lou, X. B., Si, M., Zhang, J. Y., Gordon, R. G., Tokranov, V., Oktyabrsky, S., Ye, P. D. |
| المصدر: | 72nd Device Research Conference Device Research Conference (DRC), 2014 72nd Annual. :213-214 Jun, 2014 |
| Relation: | 2014 72nd Annual Device Research Conference (DRC) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781479954056 9781479954063 |
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| تدمد: | 15483770 |
| DOI: | 10.1109/DRC.2014.6872373 |