Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides

التفاصيل البيبلوغرافية
العنوان: Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides
المؤلفون: Qi Xiang, Yeap, G., Bang, D., Miryeong Song, Ahmed, K., Ibok, E., Ming-Ren Lin
المصدر: 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) VLSI technology VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on. :160-161 1998
Relation: 1998 Symposium on VLSI Technology Digest of Technical Papers
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780347706
9780780347700
DOI:10.1109/VLSIT.1998.689240