USJ engineering impacts on FinFETs and RDF investigation using full 3D process/device simulation

التفاصيل البيبلوغرافية
العنوان: USJ engineering impacts on FinFETs and RDF investigation using full 3D process/device simulation
المؤلفون: Bazizi, E. M, Zaka, A., Herrmann, T., Benistant, F., Tin, J. H. M., Goh, J. P., Jiang, L., Joshi, M., van Meer, H., Korablev, K.
المصدر: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on. :25-28 Sep, 2014
Relation: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479952878
9781479952854
9781479952885
9781479952861
تدمد:19461569
19461577
DOI:10.1109/SISPAD.2014.6931554