Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors

التفاصيل البيبلوغرافية
العنوان: Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors
المؤلفون: Bhoolokam, Ajay, Nag, Manoj, Chasin, Adrian, Steudel, Soeren, Genoe, Jan, Gelinck, Gerwin, Groeseneken, Guido, Heremans, Paul
المصدر: 2014 44th European Solid State Device Research Conference (ESSDERC) Solid State Device Research Conference (ESSDERC), 2014 44th European. :302-304 Sep, 2014
Relation: ESSDERC 2014 - 44th European Solid State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479943784
9781479943760
تدمد:19308876
23786558
DOI:10.1109/ESSDERC.2014.6948820