Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs

التفاصيل البيبلوغرافية
العنوان: Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs
المؤلفون: Bisi, D., Stocco, A., Meneghini, M., Rampazzo, F., Cester, A., Meneghesso, G., Zanoni, E.
المصدر: 2014 44th European Solid State Device Research Conference (ESSDERC) Solid State Device Research Conference (ESSDERC), 2014 44th European. :389-392 Sep, 2014
Relation: ESSDERC 2014 - 44th European Solid State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479943784
9781479943760
تدمد:19308876
23786558
DOI:10.1109/ESSDERC.2014.6948842