مؤتمر
Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor
العنوان: | Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor |
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المؤلفون: | Loo-Yau, J. R. |
المصدر: | 2014 IEEE Central America and Panama Convention (CONCAPAN XXXIV) Central America and Panama Convention (CONCAPAN XXXIV), 2014 IEEE. :1-6 Nov, 2014 |
Relation: | 2014 IEEE Central America and Panama Convention (CONCAPAN XXXIV) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781479975846 |
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DOI: | 10.1109/CONCAPAN.2014.7000417 |