InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide

التفاصيل البيبلوغرافية
العنوان: InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide
المؤلفون: Chang, H. D., Zhou, J. H., Liu, G. M., Zeng, Z. H., Zhao, W., Sun, B., Wang, S. K., Zhou, X. L., Pan, J. Q., Liu, H. G.
المصدر: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-3 Oct, 2014
Relation: 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479932962
9781479932818
9781479932825
DOI:10.1109/ICSICT.2014.7021653