مؤتمر
InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide
العنوان: | InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide |
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المؤلفون: | Chang, H. D., Zhou, J. H., Liu, G. M., Zeng, Z. H., Zhao, W., Sun, B., Wang, S. K., Zhou, X. L., Pan, J. Q., Liu, H. G. |
المصدر: | 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-3 Oct, 2014 |
Relation: | 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781479932962 9781479932818 9781479932825 |
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DOI: | 10.1109/ICSICT.2014.7021653 |