Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

التفاصيل البيبلوغرافية
العنوان: Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique
المؤلفون: Lehmann, J., Leroux, C., Reimbold, G., Charles, M., Torres, A., Morvan, E., Baines, Y., Ghibaudo, G., Bano, E.
المصدر: Proceedings of the 2015 International Conference on Microelectronic Test Structures Microelectronic Test Structures (ICMTS), 2015 International Conference on. :163-168 Mar, 2015
Relation: 2015 International Conference on Microelectronic Test Structures (ICMTS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479983025
9781479983049
تدمد:10719032
21581029
DOI:10.1109/ICMTS.2015.7106134