دورية أكاديمية
Breakdown Voltage Model and Electrical Characteristics of CMOS Compatible RESURF STI Drain Extended MOS Transistors
| العنوان: | Breakdown Voltage Model and Electrical Characteristics of CMOS Compatible RESURF STI Drain Extended MOS Transistors |
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| المؤلفون: | Tsai, H., Yadav, Y., Liou, R., Wu, K., Lin, Y., Lien, C. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 62(6):1958-1963 Jun, 2015 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2015.2418291 |