مؤتمر
Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
| العنوان: | Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs |
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| المؤلفون: | Hong, M., Ren, F., Hobson, W.S., Kuo, J.M., Kwo, J., Mannaerts, J.P., Lothian, J.R., Marcus, M.A., Liu, C.T., Sergent, A.M., Lay, T.S., Chen, Y.K. |
| المصدر: | Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors Compound semiconductors 1997 Compound Semiconductors, 1997 IEEE International Symposium on. :319-324 1997 |
| Relation: | Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0750305568 9780750305563 |
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| DOI: | 10.1109/ISCS.1998.711645 |