التفاصيل البيبلوغرافية
| العنوان: |
Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure |
| المؤلفون: |
Chang, Y. F., Fowler, B., Zhou, F., Byun, K., Lee, J. C. |
| المصدر: |
2015 International Symposium on VLSI Technology, Systems and Applications VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on. :1-2 Apr, 2015 |
| Relation: |
2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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