مؤتمر
Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT
| العنوان: | Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT |
|---|---|
| المؤلفون: | Lehmann, J., Leroux, C., Charles, M., Torres, A., Morvan, E., Reimbold, G., Bano, E., Ghibaudo, G. |
| المصدر: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on. :261-264 May, 2015 |
| Relation: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781479962594 9781479962617 |
|---|---|
| تدمد: | 10636854 19460201 |
| DOI: | 10.1109/ISPSD.2015.7123439 |