مؤتمر
Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates
العنوان: | Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates |
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المؤلفون: | Chowdhury, S., Hitchcock, C., Dahal, R., Bhat, I. B., Chow, T. P. |
المصدر: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on. :353-356 May, 2015 |
Relation: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781479962594 9781479962617 |
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تدمد: | 10636854 19460201 |
DOI: | 10.1109/ISPSD.2015.7123462 |