Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates

التفاصيل البيبلوغرافية
العنوان: Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates
المؤلفون: Chowdhury, S., Hitchcock, C., Dahal, R., Bhat, I. B., Chow, T. P.
المصدر: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on. :353-356 May, 2015
Relation: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479962594
9781479962617
تدمد:10636854
19460201
DOI:10.1109/ISPSD.2015.7123462