مؤتمر
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions
| العنوان: | Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions |
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| المؤلفون: | Monti, F., Imperiale, I., Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G., Nguyen, L., Hernandez-Luna, A., Huckabee, J., Tipirneni, N., Denison, M. |
| المصدر: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on. :381-384 May, 2015 |
| Relation: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781479962594 9781479962617 |
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| تدمد: | 10636854 19460201 |
| DOI: | 10.1109/ISPSD.2015.7123469 |