مؤتمر
Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates
العنوان: | Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates |
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المؤلفون: | Wakita, A.S., Rohdin, H., Robbins, V.M., Moll, N., Su, C.-Y., Nagy, A., Basile, D.P. |
المصدر: | Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) Indium phosphide and related materials Indium Phosphide and Related Materials, 1998 International Conference on. :223-226 1998 |
Relation: | Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780342208 9780780342200 |
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تدمد: | 10928669 |
DOI: | 10.1109/ICIPRM.1998.712442 |