Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates

التفاصيل البيبلوغرافية
العنوان: Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates
المؤلفون: Wakita, A.S., Rohdin, H., Robbins, V.M., Moll, N., Su, C.-Y., Nagy, A., Basile, D.P.
المصدر: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) Indium phosphide and related materials Indium Phosphide and Related Materials, 1998 International Conference on. :223-226 1998
Relation: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780342208
9780780342200
تدمد:10928669
DOI:10.1109/ICIPRM.1998.712442