Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD

التفاصيل البيبلوغرافية
العنوان:	Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD
المؤلفون:	Chia-Cheng Lu, Yu-Lin Hsieh, Pei-Shen Wu, Chien-Chieh Lee, Yen-Ho Chu, Jenq-Yang Chang, I-Chen Chen, Li, Tomi T.
المصدر:	2015 China Semiconductor Technology International Conference Semiconductor Technology International Conference (CSTIC), 2015 China. :1-3 Mar, 2015
Relation:	2015 China Semiconductor Technology International Conference (CSTIC)
قاعدة البيانات:	IEEE Xplore Digital Library