مؤتمر
AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition
| العنوان: | AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition |
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| المؤلفون: | Liu, H. Y., Lee, C. S., Hsu, W. C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C., Chang, H. C. |
| المصدر: | 2015 IEEE 11th International Conference on Power Electronics and Drive Systems Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on. :578-580 Jun, 2015 |
| Relation: | 2015 IEEE 11th International Conference on Power Electronics and Drive Systems |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781479944026 |
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| تدمد: | 21645256 21645264 |
| DOI: | 10.1109/PEDS.2015.7203398 |