High sigma measurement of random threshold voltage variation in 14nm Logic FinFET technology

التفاصيل البيبلوغرافية
العنوان: High sigma measurement of random threshold voltage variation in 14nm Logic FinFET technology
المؤلفون: Giles, M. D., Arkali Radhakrishna, N., Becher, D., Kornfeld, A., Maurice, K., Mudanai, S., Natarajan, S., Newman, P., Packan, P., Rakshit, T.
المصدر: 2015 Symposium on VLSI Technology (VLSI Technology) VLSI Technology (VLSI Technology), 2015 Symposium on. :T150-T151 Jun, 2015
Relation: 2015 Symposium on VLSI Technology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863485013
تدمد:07431562
21589682
DOI:10.1109/VLSIT.2015.7223657