مؤتمر
Localized Random Telegraphic Noise Study in HfO2 dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps
العنوان: | Localized Random Telegraphic Noise Study in HfO2 dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps |
---|---|
المؤلفون: | Ranjan, A., Shubhakar, K., Raghavan, N., Thamankar, R., Bosman, M., O'Shea, S. J., Pey, K. L. |
المصدر: | 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the. :458-462 Jun, 2015 |
Relation: | 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781479999286 |
---|---|
تدمد: | 19461542 19461550 |
DOI: | 10.1109/IPFA.2015.7224356 |