مؤتمر
Localized Random Telegraphic Noise Study in HfO2 dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps
| العنوان: | Localized Random Telegraphic Noise Study in HfO2 dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps |
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| المؤلفون: | Ranjan, A., Shubhakar, K., Raghavan, N., Thamankar, R., Bosman, M., O'Shea, S. J., Pey, K. L. |
| المصدر: | 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the. :458-462 Jun, 2015 |
| Relation: | 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781479999286 |
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| تدمد: | 19461542 19461550 |
| DOI: | 10.1109/IPFA.2015.7224356 |