مؤتمر
Manufacturing large diameter GaAs substrates for epitaxial devices by VB method
العنوان: | Manufacturing large diameter GaAs substrates for epitaxial devices by VB method |
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المؤلفون: | Nakai, R., Hagi, Y., Kawarabayashi, S., Miyajima, H., Toyoda, N., Kiyama, M., Sawada, S., Kuwata, N., Nakajima, S. |
المصدر: | GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) GaAs IC Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual. :243-246 1998 |
Relation: | GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988 |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780350499 9780780350496 |
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تدمد: | 10647775 |
DOI: | 10.1109/GAAS.1998.722686 |