Manufacturing large diameter GaAs substrates for epitaxial devices by VB method

التفاصيل البيبلوغرافية
العنوان:	Manufacturing large diameter GaAs substrates for epitaxial devices by VB method
المؤلفون:	Nakai, R., Hagi, Y., Kawarabayashi, S., Miyajima, H., Toyoda, N., Kiyama, M., Sawada, S., Kuwata, N., Nakajima, S.
المصدر:	GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) GaAs IC Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual. :243-246 1998
Relation:	GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988
قاعدة البيانات:	IEEE Xplore Digital Library