Device characterization of semi-insulating GaAs substrate grown by vertical boat method for ion-implantation process

التفاصيل البيبلوغرافية
العنوان:	Device characterization of semi-insulating GaAs substrate grown by vertical boat method for ion-implantation process
المؤلفون:	Yanagisawa, M., Nakajima, S., Sakurada, T., Kiyama, M., Sawada, S., Nakai, R.
المصدر:	GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) GaAs IC Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual. :247-250 1998
Relation:	GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988
قاعدة البيانات:	IEEE Xplore Digital Library