High-mobility high-Ge-content Si1−xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width

التفاصيل البيبلوغرافية
العنوان:	High-mobility high-Ge-content Si1−xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
المؤلفون:	Hashemi, P., Ando, T., Balakrishnan, K., Bruley, J., Engelmann, S., Ott, J. A., Narayanan, V., Park, D.-G., Mo, R. T., Leobandung, E.
المصدر:	2015 Symposium on VLSI Circuits (VLSI Circuits) VLSI Circuits (VLSI Circuits), 2015 Symposium on. :T16-T17 Jun, 2015
Relation:	2015 Symposium on VLSI Circuits
قاعدة البيانات:	IEEE Xplore Digital Library