مؤتمر
The effect of ion implantation on the gate oxide integrity of SOI wafers
| العنوان: | The effect of ion implantation on the gate oxide integrity of SOI wafers |
|---|---|
| المؤلفون: | Terauchi, M., Samata, S., Kubota, H., Yoshimi, M. |
| المصدر: | 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) SOI conference SOI Conference, 1998. Proceedings., 1998 IEEE International. :125-126 1998 |
| Relation: | 1998 IEEE International SOI Conference Proceedings |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780345002 9780780345003 |
|---|---|
| تدمد: | 1078621X |
| DOI: | 10.1109/SOI.1998.723143 |