مؤتمر
The effect of ion implantation on the gate oxide integrity of SOI wafers
العنوان: | The effect of ion implantation on the gate oxide integrity of SOI wafers |
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المؤلفون: | Terauchi, M., Samata, S., Kubota, H., Yoshimi, M. |
المصدر: | 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) SOI conference SOI Conference, 1998. Proceedings., 1998 IEEE International. :125-126 1998 |
Relation: | 1998 IEEE International SOI Conference Proceedings |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780345002 9780780345003 |
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تدمد: | 1078621X |
DOI: | 10.1109/SOI.1998.723143 |