Influence of random alloy fluctuations in InGaN/GaN quantum wells on LED efficiency

التفاصيل البيبلوغرافية
العنوان: Influence of random alloy fluctuations in InGaN/GaN quantum wells on LED efficiency
المؤلفون: Auf der Maur, M., Pecchia, A., Di Carlo, A.
المصدر: 2015 IEEE 1st International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow (RTSI) Research and Technologies for Society and Industry Leveraging a better tomorrow (RTSI), 2015 IEEE 1st International Forum on. :153-156 Sep, 2015
Relation: 2015 IEEE 1st International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow (RTSI)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467381666
9781467381673
DOI:10.1109/RTSI.2015.7325088