دورية أكاديمية
Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
| العنوان: | Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer |
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| المؤلفون: | Axelsson, O., Gustafsson, S., Hjelmgren, H., Rorsman, N., Blanck, H., Splettstoesser, J., Thorpe, J., Roedle, T., Thorsell, M. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 63(1):326-332 Jan, 2016 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2015.2499313 |