Electron concentration behavior in junctionless vs junction SOI n-MOSFET transistor

التفاصيل البيبلوغرافية
العنوان: Electron concentration behavior in junctionless vs junction SOI n-MOSFET transistor
المؤلفون: Huda, A. R. N., Arshad, M. K. Md, Othman, Noraini, Voon, C. H., Ayub, R. M., Gopinath, Subash C. B., Foo, K. L., Ruslinda, A. R., Hashim, U., Lee, H. Cheun, Adelyn, P. Y. P., Kahar, S. M.
المصدر: 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Micro and Nanoelectronics (RSM), 2015 IEEE Regional Symposium on. :1-4 Aug, 2015
Relation: 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479985500
9781479985494
DOI:10.1109/RSM.2015.7354982