دورية أكاديمية
High-Gap Nb-AlN-NbN SIS Junctions for Frequency Band 790–950 GHz
| العنوان: | High-Gap Nb-AlN-NbN SIS Junctions for Frequency Band 790–950 GHz |
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| المؤلفون: | Khudchenko, A., Baryshev, A. M., Rudakov, K. I., Dmitriev, P. M., Hesper, R., de Jong, L., Koshelets, V. P. |
| المصدر: | IEEE Transactions on Terahertz Science and Technology IEEE Trans. THz Sci. Technol. Terahertz Science and Technology, IEEE Transactions on. 6(1):127-132 Jan, 2016 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 2156342X 21563446 |
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| DOI: | 10.1109/TTHZ.2015.2504783 |