مؤتمر
Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics
| العنوان: | Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics |
|---|---|
| المؤلفون: | Ilgweon Kim, Sangyeon Han, Hyungsik Kim, Jongho Lee, Bumho Choi, Sungwoo Hwang, Doyeol Ahn, Hyungcheol Shin |
| المصدر: | International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :111-114 1998 |
| Relation: | International Electron Devices Meeting 1998. Technical Digest |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780347749 9780780347748 |
|---|---|
| تدمد: | 01631918 |
| DOI: | 10.1109/IEDM.1998.746291 |