مؤتمر
Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics
العنوان: | Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics |
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المؤلفون: | Ilgweon Kim, Sangyeon Han, Hyungsik Kim, Jongho Lee, Bumho Choi, Sungwoo Hwang, Doyeol Ahn, Hyungcheol Shin |
المصدر: | International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :111-114 1998 |
Relation: | International Electron Devices Meeting 1998. Technical Digest |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780347749 9780780347748 |
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تدمد: | 01631918 |
DOI: | 10.1109/IEDM.1998.746291 |