Reduction of "dark gate" defects in replacement-metal-gate process and middle-of-line contacts for advanced planar CMOS and FinFET technology

التفاصيل البيبلوغرافية
العنوان: Reduction of "dark gate" defects in replacement-metal-gate process and middle-of-line contacts for advanced planar CMOS and FinFET technology
المؤلفون: Peng, Wen Pin, Chi, Min-hwa, Zhang, Yang, Derderian, Garo, Wahl, Jeremy, Hu, Yue, Liu, Yajiang, Wang, Haiting, Lemon, John, Wang, Tao, Mao, Jiwang, You, Shi
المصدر: 2016 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2016 China. :1-4 Mar, 2016
Relation: 2016 China Semiconductor Technology International Conference (CSTIC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467388047
9781467388030
DOI:10.1109/CSTIC.2016.7464045