مؤتمر
AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)
| العنوان: | AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV) |
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| المؤلفون: | Moens, P., Banerjee, A., Coppens, P., Declercq, F., Tack, M. |
| المصدر: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on. :455-458 Jun, 2016 |
| Relation: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467387705 9781467387699 |
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| تدمد: | 19460201 |
| DOI: | 10.1109/ISPSD.2016.7520876 |