Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers

التفاصيل البيبلوغرافية
العنوان: Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers
المؤلفون: Yamada, M., Fukuzawa, M., Kimura, N., Kaminaka, K., Yokogawa, M.
المصدر: Proceedings of the 7th Conference on Semi-insulating III-V Materials, Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on. :201-210 1992
Relation: Proceedings of the 7th Conference on Semi-insulating III-V Materials
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0750302429
9780750302425
DOI:10.1109/SIM.1992.752700